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| ESDA6V1xxM6 TRANSILTM array for ESD protection Main applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: Computers Printers Communication systems Cellular phone handsets and accessories Video equipment Micro QFN Package Functional diagram ESDA6V1M6 I/O1 1 GND 2 I/O2 3 6 I/O5 5 GND 4 I/O3 Features 4 unidirectional TRANSIL diodes (ESDA6V1M6) 5 unidirectional TRANSIL diodes (ESDA6V1-5M6) Breakdown Voltage VBR = 6.1 V min High peak power dissipation: 100 Watts 8/20 s Low leakage current < 500 nA Low diode capacitance (70 pF typ at 0 V) Very small PCB area: 1.45 mm 500 microns pitch Leadfree package ESDA6V1-5M6 I/O1 1 GND 2 I/O2 3 6 I/O5 5 I/O4 4 I/O3 Order Code Part number ESDA6V1M6 ESDA6V1-5M6 Marking I J Description The ESDA6V1xxM6 is monolithic arrays designed to protect up to 4 or 5 lines against ESD transients. The device is ideal for applications where both reduced print circuit board space and power absorption capability are required. Complies with the following standards: IEC61000-4-2 15 kV (air discharge) (contact discharge) (human body model) 8 kV 25 kV Benefits High ESD protection level High integration Suitable for high density boards MIL STD 883E- Method 3015-7: class3 TM: TRANSIL is a trademark of STMicroelectronics October 2005 Rev 2 1/8 www.st.com 8 1 Characteristics ESDA6V1xxM6 1 1.1 Characteristics Absolute maximum ratings (Tamb = 25 C) Symbol VPP PPP Ipp Tj Tstg TL TOP Parameter ESD discharge - IEC61000-4-2 air discharge IEC61000-4-2 contact discharge Peak pulse power dissipation (8/20 s)(1) Tj initial = Tamb Value 15 8 100 8 125 -55 + 150 260 -40 + 125 Unit kV W A C C C C Repetitive peak pulse current typical value (8/20 s) Junction temperature Storage temperature range Maximum lead temperature for soldering during 10 s at 5 mm for case Operating temperature range 1. For a surge greater than the maximum values, the diode will fail in short-circuit. 1.2 Electrical characteristics (Tamb = 25 C) Symbol VRM VBR VCL IRM IPP T VF Parameter I Stand-off voltage IF Breakdown voltage Clamping voltage Leakage current @ VRM Peak pulse current Voltage temperature coefficient Forward voltage drop Slope= 1/ Rd I PP V CL V BR VRM I RM IR VF V Parameter VBR IRM VF Rd T(1) C Test Condition IR = 1 mA VRM = 3 V IF = 10 mA Min 6.1 Typ Max 7.2 500 1 Unit V nA V 1 IR = 1 mA VR =0 V DC, F = 1 MHz, Vosc = 30 mVRMS 70 5 10-4/C pF 1. VBR = T * (Tamb - 25 C) * VBR (25 C) 2/8 ESDA6V1xxM6 Figure 1. Relative variation of peak pulse power versus initial junction temperature Figure 2. 1 Characteristics Peak pulse power versus exponential pulse duration PPP [Tj i n iti al ] /P [Tj i n iti al = 2 5 C] PP 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 T j (C) PP P(W ) 1000 Tj initial = 25C 100 t P (s) 10 1 10 100 Figure 3. Clamping voltage versus peak pulse Figure 4. current (typical values, rectangular waveform) IF M(A) 1.E+00 Forward voltage drop versus peak forward current (typical values) IP P(A) 100.0 8/20s Tj initial =25C 10.0 1.E-01 Tj =125C Tj =25C 1.0 1.E-02 V CL (V) 0.1 0 10 20 30 40 50 60 70 1.E-03 0.0 0.2 0.4 0.6 0.8 1.0 V FM (V) 1.2 1.4 1.6 1.8 2.0 Figure 5. Junction capacitance vesus reverse Figure 6. voltage applied (typical values) Relative variation of leakage current versus junction temperature (typical values) C (p F ) 80 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 10 100 IR [Tj] / IR [Tj= 2 5 C ] F=1MHz VOSC=30mVRMS Tj=25C VR =3V V R (V) 1 25 50 75 T j (C) 100 125 3/8 1 Characteristics ESDA6V1xxM6 Figure 8. Analog crosstalk measurements between channels dB 0.00 Figure 7. dB 0.00 S21 attenuation measurement results of each channel -10.00 -30.00 -20.00 -60.00 -30.00 -90.00 f/Hz -40.00 100.0k 1.0M 10.0M 100.0M 1.0G f/Hz -120.00 100.0k 1.0M 10.0M 100.0M 1.0G Figure 9. ESD response to IEC6100-4-2 (+15 kV air discharge) on each channel Figure 10. ESD response to IEC6100-4-2 (-15 kV air discharge) on each channel 35V -30V 4/8 ESDA6V1xxM6 2 Ordering information scheme 2 Ordering information scheme ESDA ESD Array Breakdown voltage 6V1 = 6.1 Volts min Number of lines blank = 4 line -5 = 5 line protection Package M6 = Micro QFN 6 leads 6V1 xx M6 3 Package information Table 1. Mechanical data DIMENSIONS D REF Millimeters Min Typ Max Min 0.20 0.00 0.07 Inches Typ 0.22 0.01 0.10 0.57 0.39 0.20 0.08 0.12 0.14 0.16 Max 0.24 0.02 0.12 E 12 A A1 12 k b e L A A1 b D E e k L 0.50 0.55 0.60 0.00 0.02 0.05 0.18 0.25 0.30 1.45 1.00 0.50 0.20 0.30 0.35 0.40 5/8 3 Package information ESDA6V1xxM6 Figure 11. Footprint 0.50 0.25 0.65 0.30 1.60 Measurements in mm Figure 12. Tape and reel specification Dot identifying Pin A1 location 2.0+/-0.05 4.00+/-0.1 1.5 +/- 0.1 1.75 +/- 0.1 3.5 +/- 0.03 0.75 In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 8.0 +/- 0.3 X: Marking 1.65 X X X 1.20 User direction of unreeling 4.00 6/8 ESDA6V1xxM6 4 Ordering information 4 Ordering information Part number ESDA6V1M6 ESDA6V1-5M6 Marking I J Package Micro QFN Micro QFN Weight 2.2 mg 2.2 mg Base qty 30,000 30,000 Delivery mode Tape and reel Tape and reel 5 Revision history Date 19-Sep-2005 10-Oct-2005 Revision 1 2 Initial release. Package title changed from DFN to QFN. No technical changes. Changes 7/8 5 Revision history ESDA6V1xxM6 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8 |
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